參數(shù)資料
型號(hào): 933939780112
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁(yè)數(shù): 17/18頁(yè)
文件大?。?/td> 138K
代理商: 933939780112
September 1992
8
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF175
List of components (class-A test circuit)
Note
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1
multilayer ceramic chip capacitor
(note 1)
39 pF
C2
multilayer ceramic chip capacitor
3
× 10 nF
2222 852 47103
C3, C4, C6
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C5
multilayer ceramic chip capacitor
10 nF
2222 852 47103
C7
multilayer ceramic chip capacitor
3
× 100 nF
2222 852 47104
C8
aluminium electrolytic capacitor
10
F, 63 V
2222 030 28109
C9
multilayer ceramic chip capacitor
(note 1)
24 pF
L1
4 turns enamelled 0.6 mm copper
wire
86 nH
length 3.3 mm;
int. dia. 5 mm;
leads 2 x 2 mm
L2
36 turns enamelled 0.7 mm copper
wire wound on a rod grade 4B1
Ferroxcube drain choke
20
H
length 30 mm;
int. dia. 5 mm
4330 030 30031
L3
grade 3B Ferroxcube wideband RF
choke
4312 020 36640
L4
8 turns enamelled 1 mm copper wire 189 nH
length 9.5 mm;
int. dia. 5 mm;
leads 2 x 3 mm
R1
0.4 W metal lm resistor
24
R2
0.4 W metal lm resistor
1500
R3
0.4 W metal lm resistor
10
T1
4 : 1 transformer; 18 turns twisted
pair of 0.25 mm copper wire with
10 twists per cm, wound on a grade
4C6 toroidal core
dimensions
9 x 6 x 3 mm
4322 020 97171
相關(guān)PDF資料
PDF描述
0569960000 24 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK
933943940115 400 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933943950135 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933943950115 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933946340215 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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