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參數(shù)資料
| 型號： | 933939780112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 15/18頁 |
| 文件大?。?/td> | 138K |
| 代理商： | 933939780112 |
September 1992
6
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF175
APPLICATION INFORMATION FOR CLASS-A OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specied.
RF performance in SSB operation in a common source circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
PL
(W)
f
(MHz)
VDS
(V)
IDQ
(mA)
GP
(dB)
d3
(dB)
(note 1)
d5
(dB)
(note 1)
RGS
(
)
0 to 8 (PEP)
28
50
800
> 24
typ. 28
>40
typ.
44
<40
typ.
64
24
Fig.9
Power gain as a function of load power,
typical values.
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 ;f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
handbook, halfpage
0
5
10
20
40
30
10
0
20
MGP069
15
Gp
(dB)
PL (W) PEP
Fig.10 Third order intermodulation distortion as a
function of load power, typical values.
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 ;f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
handbook, halfpage
0
5
10
20
0
20
60
80
40
MGP070
15
d3
(dB)
PL (W) PEP
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