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參數(shù)資料
| 型號： | 933939780112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 11/18頁 |
| 文件大?。?/td> | 138K |
| 代理商： | 933939780112 |
September 1992
2
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF175
FEATURES
High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch
Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
The transistor has a 4-lead, SOT123
flange envelope, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the 'General' section for further
information.
PINNING - SOT123
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
ook, halfpage
1
23
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
Note
1. 2-tone efficiency.
MODE OF
OPERATION
f
(MHZ)
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
d3
(dB)
class-A
28
50
800
8 (PEP)
> 24
< 40
class-AB
28
50
150
30 (PEP)
typ. 24
typ. 40
(note 1)
typ.
35
CW, class-B
108
50
30
typ. 20
typ. 65
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