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參數(shù)資料
| 型號(hào)： | 933939780112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 13/18頁 |
| 文件大?。?/td> | 138K |
| 代理商： | 933939780112 |
September 1992
4
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF175
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 mA; VGS = 0
110
V
IDSS
drain-source leakage current
VGS = 0; VDS = 50 V
100
A
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
1
A
VGS(th)
gate-source threshold voltage
ID = 10 mA; VDS = 10 V
2
4.5
V
GS
gate-source voltage difference of
matched pairs
ID = 10 mA; VDS = 10 V
100
mV
gfs
forward transconductance
ID = 1 A; VDS = 10 V
1.1
1.6
S
RDS(on)
drain-source on-state resistance
ID = 1 A; VGS = 10 V
0.75
1.5
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
5.5
A
Cis
input capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
130
pF
Cos
output capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
36
pF
Crs
feedback capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
3.7
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS = 10 V.
handbook, halfpage
0
5
MGP064
102
101
1
4
3
2
1
T.C.
(mV/K)
ID (A)
Fig.5
Drain current as a function of gate-source
voltage, typical values.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
6
4
2
0
MGP065
510
VGS (V)
ID
(A)
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