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參數(shù)資料
| 型號： | 933929990112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 933929990112 |
1996 Oct 21
6
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF246
APPLICATION INFORMATION
RF performance in CW operation in a common source test circuit.
Th =25 °C; Rth mb-h = 0.2 K/W; RGS =12 unless otherwise specied.
Note
1. VGS = 0 (class-C).
Ruggedness in class-B operation
The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the
following conditions: VDS = 28 V; f = 108 MHz; Th =25 °C; Rth mb-h = 0.2 K/W at rated output power.
Noise gure
Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with VDS = 28 V; ID =2A;
f = 108 MHz; RGS =27 ; Th =25 °C; Rth mb-h = 0.2 K/W; F = typ. 3 dB.
MODE OF OPERATION
f
(MHz)
VDS
(V)
ID
(A)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
108
28
0.1
80
>16
>55
CW, class-B
108
28
0.1
80
typ. 18
typ. 65
CW, class-C
108
28
0(1)
80
typ. 15
typ. 72
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12 ;
f = 108 MHz; Th =25 °C; Rth mb-h = 0.2 K/W.
handbook, halfpage
0
150
100
20
0
10
MGG096
50
Gp
(dB)
PL (W)
100
0
50
ηD
(%)
ηD
Gp
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12 ;
f = 108 MHz; Th =25 °C; Rth mb-h = 0.2 K/W.
handbook, halfpage
150
50
100
MGG095
05
34
12
PL
(W)
PIN (W)
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