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參數(shù)資料
| 型號(hào)： | 933929990112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | 933929990112 |
1996 Oct 21
10
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF246
Fig.13 Input impedance as a function of frequency
(series components), typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12 ;
PL =80W;Th =25 °C; Rth mb-h = 0.2 K/W.
handbook, halfpage
0
50
100
200
5
0
10
15
5
150
MGG093
f (MHz)
Zi
(
)
ri
xi
Fig.14 Load impedance as a function of frequency
(series components), typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12 ;
PL =80W;Th =25 °C; Rth mb-h = 0.2 K/W.
handbook, halfpage
6
4
0
2
MGG094
0
50
100
200
150
ZL
(
)
f (MHz)
RL
XL
Fig.15 Power gain as a function of frequency,
typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12 ;
PL =80W;Th =25 °C; Rth mb-h = 0.2 K/W.
handbook, halfpage
0
50
100
200
40
30
10
0
20
150
MGG092
Gp
(dB)
f (MHz)
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