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參數(shù)資料
| 型號(hào)： | 933929990112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | 933929990112 |
1996 Oct 21
2
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF246
FEATURES
High power gain
Low noise figure
Easy power control
Good thermal stability
Withstands full load mismatch.
APPLICATIONS
Large signal amplifier applications in the VHF frequency
range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121 flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the General section of Data
Handbook SC19a for further information.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT121
PIN
SYMBOL
DESCRIPTION
1
d
drain
2
s
source
3
g
gate
4
s
source
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM267
14
3
2
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
108
28
80
≥16
≥55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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| 933930000112 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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