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參數(shù)資料
| 型號(hào)： | 933929990112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | 933929990112 |
1996 Oct 21
3
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF246
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±20
V
ID
DC drain current
13
A
Ptot
total power dissipation
up to Tamb =25 °C
130
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
1.35
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.2
K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb =25 °C.
handbook, halfpage
101
102
1
10
110
(1)
50
ID
(A)
VDS (V)
MRA931
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
50
100
150
200
150
50
0
100
MGG104
Ptot
(W)
Th (°C)
(1)
(2)
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