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參數(shù)資料
| 型號(hào)： | 933929990112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 86K |
| 代理商： | 933929990112 |
1996 Oct 21
4
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF246
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID =50mA
65
V
IDSS
drain-source leakage current
VGS = 0; VDS =28V
2.5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
1
A
VGSth
gate-source threshold voltage
ID = 50 mA; VDS =10V
2
4.5
V
GS
gate-source voltage difference of
matched pairs
ID = 50 mA; VDS =10V
100
mV
gfs
forward transconductance
ID = 2.5 A or 5 A; VDS = 10 V
3
4.2
S
RDSon
drain-source on-state resistance
ID = 5 A; VGS =10V
0.2
0.3
IDSX
on-state drain current
VGS = 10 V; VDS =10V
22
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
225
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
180
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
25
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS = 10 V; valid for Th = 25 to 70 °C.
handbook, halfpage
2
6
2
0
4
MGG105
102
101
110
T.C.
(mV/K)
ID (A)
Fig.5
Drain current as a function of gate-source
voltage, typical values.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
5
10
20
40
30
10
0
20
15
MGG106
VGS (V)
ID
(A)
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