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參數(shù)資料
| 型號： | 933929990112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 86K |
| 代理商： | 933929990112 |
1996 Oct 21
5
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF246
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values.
VGS = 10 V; ID =5A.
handbook, halfpage
050
100
200
0
MBD297
150
T ( C)
o
j
RDSon
(
)
300
400
100
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
0
200
400
600
800
010
20
30
40
C
(pF)
C is
C os
(V)
VDS
MRA930
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
010
20
40
300
100
0
200
MGG108
30
VDS (V)
Crs
(pF)
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