參數(shù)資料
型號(hào): 7782
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
中文描述: 32兆位(含2Mb × 16,雙行,突發(fā))1.8V電源快閃記憶體
文件頁(yè)數(shù): 33/63頁(yè)
文件大?。?/td> 435K
代理商: 7782
33/63
M58CR032C, M58CR032D
Table 19. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DD
Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
V
OUT
V
DDQ
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=6MHz)
E = V
IL
, G = V
IH
3
6
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
6
13
mA
8 Word
8
14
mA
Continuous
6
10
mA
I
DD2
Supply Current
(Reset)
RP = V
SS
± 0.2V
2
10
μA
I
DD3
Supply Current (Standby)
E = V
DD
± 0.2V
10
50
μA
I
DD4
(1)
Supply Current (Program)
V
PP
= V
PPH
8
15
mA
V
PP
= V
DD
10
20
mA
Supply Current (Erase)
V
PP
= V
PPH
8
15
mA
V
PP
= V
DD
10
20
mA
I
DD5 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
13
26
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
16
30
mA
I
DD6(1)
Supply Current Program/ Erase
Suspended (Standby)
E = V
DD
± 0.2V
10
50
μA
I
PP1(1)
V
PP
Supply Current (Program)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
V
PP
Supply Current (Erase)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
I
PP2
V
PP
Supply Current (Read)
V
PP
= V
PPH
100
400
μA
V
PP
V
DD
0.2
5
μA
I
PP3(1)
V
PP
Supply Current (Standby)
V
PP
V
DD
0.2
5
μA
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