參數(shù)資料
型號(hào)： 7782
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，雙行，突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 26/63頁(yè)
文件大?。?/td> 435K
代理商： 7782
M58CR032C, M58CR032D
26/63
Table 12. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. T
A
= –40 to 85°C; V
DD
= 1.65V to 2V; V
DDQ
= 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (30ms).
3. Excludes the time needed to execute the command sequence.
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
V
P
D
Parameter Block (4 KWord) Erase
(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank A (8Mbit) Erase
Preprogrammed
5.5
s
Not Preprogrammed
9
s
Bank B (24Mbit) Erase
Preprogrammed
16.5
s
Not Preprogrammed
27
s
Parameter Block (4 KWord) Program
(3)
40
ms
Main Block (32 KWord) Program
(3)
300
ms
Word Program
(3)
10
10
100
μs
Program Suspend Latency
5
10
μs
Erase Suspend Latency
5
20
μs
Program/Erase Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
P
P
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank A (8Mbit) Erase
6.5
s
Bank B (24Mbit) Erase
19.5
s
4Mbit Program
Quadruple Word
510
ms
Word/ Double Word/ Quadruple Word Program
(3)
8
100
μs
Parameter Block (4 KWord)
Program
(3)
Quadruple Word
8
ms
Word
32
ms
Main Block (32 KWord) Program
(3)
Quadruple Word
64
ms
Word
256
ms
Program/Erase Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
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