參數(shù)資料
型號(hào): 71V67703S75BQ
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1.2 MM HEIGHT, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù): 6/23頁(yè)
文件大?。?/td> 515K
代理商: 71V67703S75BQ
6.42
14
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
O
1(
A
z)
C
LK
A
D
S
P
A
D
R
E
S
G
W
A
D
V
O
E
D
A
T
A
O
U
T
tC
Y
C
tC
H
tC
L
tH
A
tS
W
tH
W
tC
LZ
A
x
A
y
A
z
tH
S
I1(
A
y)
tS
D
tH
D
tO
LZ
tC
D
tC
D
C
D
A
T
A
IN
(2
)
tO
E
O
1(
A
z)
S
in
gl
e
R
ea
d
F
low
-t
h
rou
gh
B
ur
st
R
ead
W
ri
te
tO
H
Z
tS
S
tS
A
O
3(
A
z)
O
2(
A
z)
O
4(
A
z)
O
1(
A
x)
53
09
dr
w
07
tC
D
,
NOTES:
1
.
Device
is
selected
through
entire
cycle;
CE
and
CS
1are
LOW,
CS
0is
HIGH.
2
.
ZZ
input
is
LOW
and
LBO
is
Don't
Care
for
this
cycle.
3
.
O1
(Ax)
represents
the
first
output
from
the
external
address
Ax.
I1
(Ay)
represents
the
first
input
from
the
external
addre
ss
Ay;
O1
(Az)
represents
the
first
output
from
the
external
address
Az;
O2
(Az)
represents
the
next
output
data
in
the
burst
sequence
of
the
base
address
Az,
etc.
where
A0
and
A1
are
advancing
for
the
four
word
burst
i
nthe
sequence
defined
by
the
state
of
the
LBO
input.
Timing Waveform of Combined Flow-Through Read and Write Cycles (1,2,3)
相關(guān)PDF資料
PDF描述
72-30-33 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR
72-40-43 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR
72-10-14 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR
72-30-13 0 MHz - 4000 MHz RF/MICROWAVE FIXED ATTENUATOR
72013-8007LF 24 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
71V67703S75BQ8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel
71V67703S75BQG 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V67703S75BQG8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel
71V67703S75BQGI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V67703S75BQGI8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel