參數(shù)資料
型號： 71V67703S75BQ
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
封裝： 13 X 15 MM, 1.2 MM HEIGHT, 1 MM PITCH, FBGA-165
文件頁數(shù)： 18/23頁
文件大?。?/td> 515K
代理商： 71V67703S75BQ
6.42
4
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
100-Pin TQFP Capacitance
(TA = +25° C, f = 1.0MHz)
Recommended Operating
Temperature Supply Voltage
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7. TA is the "instant on" case temperature.
Recommended DC Operating
Conditions
NOTE:
1. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commercial
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM
(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM
(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA(7)
Operating Temperature
-0 to +70
oC
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
5309 tbl 03
Grade
Temperature(1)
VSS
VDD
VDDQ
Commercial
0°C to +70°C
0V
3.3V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
5309 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDQ
I/O Supply Voltage
3.135
3.3
3.465
V
VSS
Supply Voltage
0
V
VIH
Input High Voltage - Inputs
2.0
____
VDD +0.3
V
VIH
Input High Voltage - I/O
2.0
____
VDDQ +0.3
V
VIL
Input Low Voltage
-0.3
(1)
____
0.8
V
5309 tbl 05
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5309 tbl 07
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5309 tbl 07a
119 BGA Capacitance
(TA = +25° C, f = 1.0MHz)
NOTE:
1. TA is the "instant on" case temperature.
165 fBGA Capacitance
(TA = +25° C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5309 tbl 07b
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相關代理商/技術參數(shù)
參數(shù)描述
71V67703S75BQ8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel
71V67703S75BQG 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V67703S75BQG8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel
71V67703S75BQGI 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V67703S75BQGI8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel
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