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參數(shù)資料
| 型號： | 71V67703S75BQ |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 36 CACHE SRAM, 7.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.2 MM HEIGHT, 1 MM PITCH, FBGA-165 |
| 文件頁數(shù)： | 22/23頁 |
| 文件大?。?/td> | 515K |
| 代理商： | 71V67703S75BQ |
6.42
8
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Configuration 512K x 18, 165 fBGA
Pin Configuration 256K x 36, 165 fBGA
1
2
3
456789
10
11
ANC(3)
A7
CE
BW3
BW2
CS1
BWE
ADSC
ADV
A8
NC
BNC
A6
CS0
BW4
BW1
CLK
GW
OE
ADSP
A9
NC(3)
CI/OP3
NC
VDDQ
VSS
VDDQ
NC
I/OP2
DI/O17
I/O16
VDDQ
VDD
VSS
VDD
VDDQ
I/O15
I/O14
EI/O19
I/O18
VDDQ
VDD
VSS
VDD
VDDQ
I/O13
I/O12
FI/O21
I/O20
VDDQ
VDD
VSS
VDD
VDDQ
I/O11
I/O10
GI/O23
I/O22
VDDQ
VDD
VSS
VDD
VDDQ
I/O9
I/O8
HVSS(1)
NC
VDD
VSS
VDD
NC
ZZ(2)
JI/O25
I/O24
VDDQ
VDD
VSS
VDD
VDDQ
I/O7
I/O6
KI/O27
I/O26
VDDQ
VDD
VSS
VDD
VDDQ
I/O5
I/O4
LI/O29
I/O28
VDDQ
VDD
VSS
VDD
VDDQ
I/O3
I/O2
MI/O31
I/O30
VDDQ
VDD
VSS
VDD
VDDQ
I/O1
I/O0
NI/OP4
NC
VDDQ
VSS
NC
NC(3)
NC
VSS
VDDQ
NC
I/OP1
PNC
NC(3)
A5
A2
DNU(4)
A1
DNU(4)
A10
A13
A14
A17
R
LBO
NC(3)
A4
A3
DNU(4)
A
DNU(4)
A11
A12
A15
A16
5309tbl 17a
1
2
34
56
78
9
10
11
ANC(3)
A7
CE
BW2
NC
CS1
BWE
ADSC
ADV
A8
A10
BNC
A6
CS0
NC
BW1
CLK
GW
OE
ADSP
A9
NC(3)
CNC
NC
VDDQ
VSS
VDDQ
NC
I/OP1
DNC
I/O8
VDDQ
VDD
VSS
VDD
VDDQ
NC
I/O7
ENC
I/O9
VDDQ
VDD
VSS
VDD
VDDQ
NC
I/O6
FNC
I/O10
VDDQ
VDD
VSS
VDD
VDDQ
NC
I/O5
GNC
I/O11
VDDQ
VDD
VSS
VDD
VDDQ
NC
I/O4
HVSS(1)
NC
VDD
VSS
VDD
NC
ZZ(2)
JI/O12
NC
VDDQ
VDD
VSS
VDD
VDDQ
I/O3
NC
KI/O13
NC
VDDQ
VDD
VSS
VDD
VDDQ
I/O2
NC
LI/O14
NC
VDDQ
VDD
VSS
VDD
VDDQ
I/O1
NC
MI/O15
NC
VDDQ
VDD
VSS
VDD
VDDQ
I/O0
NC
NI/OP2
NC
VDDQ
VSS
NC
NC(3)
NC
VSS
VDDQ
NC
PNC
NC(3)
A5
A2
DNU(4)
A1
DNU(4)
A11
A14
A15
A18
R
LBO
NC(3)
A4
A3
DNU(4)
A0
DNU(4)
A12
A13
A16
A17
5309 tbl 17b
NOTES:
1. H1 does not have to be directly connected to VSS, as long as the input voltage is < VIL.
2. H11 can be left unconnected and the device will always remain in active mode.
3. Pin N6, B11, A1, R2 and P2 are reserved for 18M, 36M, 72M, and 144M and 288M respectively.
4. DNU= Do not use; these signals can either be left unconnected or tied to Vss.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71V67703S75BQ8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel |
| 71V67703S75BQG | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V67703S75BQG8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel |
| 71V67703S75BQGI | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V67703S75BQGI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 165-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 165FBGA - Tape and Reel |
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