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參數(shù)資料
| 型號(hào)： | 70V3319S166BFG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 18 DUAL-PORT SRAM, 3.6 ns, CBGA208 |
| 封裝： | 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 |
| 文件頁數(shù)： | 8/23頁 |
| 文件大?。?/td> | 222K |
| 代理商： | 70V3319S166BFG |
6.42
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
16
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(2)
TimingWaveform of Flow-ThroughRead-to-Write-to-Read(OEControlled)(2)
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2.
CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
3. Addresses do not have to be accessed sequentially since
ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
R/W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
DATAIN
Dn + 2
CE0
CLK
6523 drw 14
Qn
DATAOUT
CE1
UB, LB
tCD1
Qn + 1
tCH1
tCL1
tCYC1
tSD tHD
tCD1
tDC
tCKHZ
Qn + 3
tCD1
tDC
tSC
tHC
tSB
tHB
tSW tHW
tSA
tHA
READ
NOP
READ
tCKLZ
(3)
(1)
tSW tHW
WRITE
(5)
R/W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
An + 5
(3)
DATAIN
Dn + 2
CE0
CLK
5623 drw 15
Qn
DATAOUT
CE1
UB, LB
tCD1
tCH1
tCL1
tCYC1
tSD tHD
tCD1
tDC
Qn + 4
tCD1
tDC
tSC
tHC
tSB
tHB
tSW tHW
tSA
tHA
READ
WRITE
READ
tCKLZ
(1)
Dn + 3
tOHZ
tSW tHW
OE
tOE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 70V3319S166BFG8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 12ns/3.6ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 12NS/3.6NS 208FPBGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| 70V3319S166PRF | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V3319S166PRF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 12ns/3.6ns 128-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 12NS/3.6NS 128TQFP - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
| 70V3319S166PRFG | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V3319S166PRFG8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 3.3V 4.5M-Bit 256K x 18 12ns/3.6ns 128-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4MBIT 256KX18 12NS/3.6NS 128TQFP - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx18 STD-PWR 3.3V SYNC DUAL-PORT RAM |
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