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參數(shù)資料
| 型號： | 50MT060ULSTAPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 單結(jié)晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 10 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 100 Amp Low Side Chopper |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 226K |
| 代理商： | 50MT060ULSTAPBF |
50MT060ULSTAPbF
Vishay Semiconductors
www.vishay.com
Revision: 17-Jun-11
5
Document Number: 94540
For technical questions, contact:
indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 7 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
Fig. 8 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Gate Resistance
Fig. 11 - Typical Switching Losses vs. Junction Temperature
1E-006
1E-005
0.0001
t1, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τ
i (sec)
0.200 0.000993
0.296 0.038934
0.102 0.52648
J
τ
J
1
τ
1
2
τ
2
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
C
Ci
i
Ri
Ci=
τ
i
/
Ri
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
14000
C
Coes
Cres
Cies
VGE = 0V, f = 1 MHZ
Cies = Cge+Cgc, CceSHORTED
Cres = Cgc
Coes = Cce + Cgc
0
100
QG, Total Gate Charge (nC)
200
300
400
0.0
4.0
8.0
12.0
16.0
20.0
V
IC= 100A
VCE = 480V
0
10
20
30
Rg, Gate Resistance (
Ω
)
0.0
1.0
2.0
3.0
4.0
5.0
S
VCC= 480V
VGE = 15V
TJ= 25°C
I C = 100A
EOFF
EON
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (°C)
0.1
1
10
100
T
RG= 5.0
Ω
VGE= 15V
VCC= 480V
IC= 100A
IC= 50A
IC= 25A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 50MT060WH | 功能描述:IGBT WARP 600V 114A MTP RoHS:否 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| 50MT060WHA | 制造商:International Rectifier 功能描述: |
| 50MT060WHPBF | 制造商:International Rectifier 功能描述:IGBT MODULE MTP |
| 50MT060WHT | 制造商:Vishay Semiconductors 功能描述:IGBT MODULE MTP |
| 50MT060WHTA | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HALF-BRIDGE IGBT MTP |
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