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參數(shù)資料
| 型號(hào)： | 50MT060ULSTAPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 單結(jié)晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 10 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 100 Amp Low Side Chopper |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 226K |
| 代理商： | 50MT060ULSTAPBF |
50MT060ULSTAPbF
Vishay Semiconductors
www.vishay.com
Revision: 17-Jun-11
3
Document Number: 94540
For technical questions, contact:
indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
(1)
T
0
, T
1
are thermistor′s temperatures
R
0
R
1
(2)
, temperature in Kelvin
Fig. 1 - Typical Load Current vs. Frequency (Load Current = I
RMS
of Fundamental)
THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Resistance
R
0
(1)
T
0
= 25 °C
T
0
= 25 °C
T
1
= 85 °C
-
30
-
k
Sensitivity index of the
thermistor material
(1)(2)
-
4000
-
K
------
1
T
0
-----
1
T
1
-----
–
exp
=
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
T
Stg
- 40
-
150
°C
Storage temperature range
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
0.28
°C/W
Diode
-
-
0.6
Case to sink per module
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
-
0.06
-
Mounting torque to heatsink ± 10 %
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3
Nm
Weight
66
g
0.1
1
10
100
f , Frequency ( kHz )
0
25
50
75
100
L
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Power Dissipation = 92W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 50MT060WH | 功能描述:IGBT WARP 600V 114A MTP RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| 50MT060WHA | 制造商:International Rectifier 功能描述: |
| 50MT060WHPBF | 制造商:International Rectifier 功能描述:IGBT MODULE MTP |
| 50MT060WHT | 制造商:Vishay Semiconductors 功能描述:IGBT MODULE MTP |
| 50MT060WHTA | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HALF-BRIDGE IGBT MTP |
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