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| 型號： | 50MT060ULSTAPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 單結(jié)晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 10 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 100 Amp Low Side Chopper |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 226K |
| 代理商： | 50MT060ULSTAPBF |
50MT060ULSTAPbF
Vishay Semiconductors
www.vishay.com
Revision: 17-Jun-11
2
Document Number: 94540
For technical questions, contact:
indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V
(BR)CES
V
GE
= 0 V, I
C
= 250 μA
600
-
-
V
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 50 A
-
1.69
2.31
V
GE
= 15 V, I
C
= 100 A
-
1.96
2.55
V
GE
= 15 V, I
C
= 100 A, T
J
= 150 °C
-
1.88
2.24
Gate threshold voltage
V
GE(th)
I
C
= 0.5 mA
3
-
6
Diode reverse breakdown voltage
V
BR
I
R
= 200 μA
600
-
-
Temperature coefficient of threshold voltage
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 500 μA
-
- 13
-
mV/°C
Forward transconductance
g
fe
V
CE
= 50 V, I
C
= 100 A
22
29
-
S
Collector to emitter leaking current
I
CES
V
GE
= 0 V, V
CE
= 600 V
-
-
0.25
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
-
-
6
Diode forward voltage drop
V
FM
I
F
= 100 A, V
GE
= 0 V
-
1.64
1.82
V
I
F
= 100 A, V
GE
= 0 V, T
J
= 150 °C
-
1.56
1.74
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
-
-
± 250
nA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Q
g
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
-
370
555
nC
Gate to emitter charge (turn-on)
Q
ge
-
64
96
Gate to collector charge (turn-on)
Q
gc
-
163
245
Turn-on switching loss
E
on
V
CC
= 480 V, I
C
= 50 A, V
GE
= 15 V,
R
g
= 5
, T
J
= 25 °C,
energy losses include tail and diode
reverse recovery
-
0.7
1.2
mJ
Turn-off switching loss
E
off
-
1.7
2.6
Total switching loss
E
ts
-
2.4
3.8
Turn-on switching loss
E
on
V
CC
= 480 V, I
C
= 50 A, V
GE
= 15 V,
R
g
= 5
, T
J
= 125 °C,
energy losses include tail and diode
reverse recovery
-
1.1
1.7
Turn-off switching loss
E
off
-
2.5
3.8
Total switching loss
E
ts
-
3.6
5.5
Input capacitance
C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
-
9800
14 700
pF
Output capacitance
C
oes
-
602
903
Reverse transfer capacitance
C
res
-
121
182
Diode junction capacitance
C
t
V
R
= 600 V, f = 1.0 MHz
-
118
177
Diode reverse recovery time
t
rr
V
CC
= 480 V, I
C
= 50 A
dI/dt = 200 A/μs
R
g
= 5
-
99
150
ns
Diode peak reverse current
I
rr
-
6.5
9.8
A
Diode recovery charge
Q
rr
-
320
735
nC
Diode peak rate of fall of recovery during t
b
dI
(rec)M
/dt
-
236
-
A/μs
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