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參數(shù)資料
| 型號： | 3SK194 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應晶體管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 3SK194 |
3SK194
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
15
—
—
V
I
D
= 200
μ
A,
V
G1S
= V
G2S
= –5 V
I
G1
=
±
10
μ
A, V
G2S
= V
DS
= 0
Gate 1 to source breakdown
voltage
V
(BR)G1SS
±
10
—
—
V
Gate 2 to source breakdown
voltage
V
(BR)G2SS
±
10
—
—
V
I
G2
=
±
10
μ
A, V
G1S
= V
DS
= 0
Gate 1 cutoff current
I
G1SS
I
G2SS
—
—
±
100
±
100
nA
V
G1S
=
±
8 V, V
G2S
= V
DS
= 0
V
G2S
=
±
8 V, V
G1S
= V
DS
= 0
V
DS
= 10 V, V
G2S
= 3 V,
I
D
μ
A
V
DS
= 10 V, V
G1S
= 3 V,
I
D
μ
A
V
DS
= 6 V, V
G1S
= 0, V
G2S
= 3 V
V
DS
= 6 V, V
G2S
= 3 V,
I
D
V
DS
= 6 V, V
G2S
= 3 V,
I
D
Gate 2 cutoff current
—
—
nA
Gate 1 to source cutoff voltage V
G1S(off)
—
—
–1.0
V
Gate 2 to source cutoff voltage V
G2S(off)
—
—
–1.5
V
Drain current
I
DSS
|y
fs
|
0
—
10
mA
Forward transfer admittance
17
—
—
mS
Input capacitance
Ciss
—
2.8
3.5
pF
Output capacitance
Coss
—
1.8
2.5
pF
Reverse transfer capacitance
Crss
—
0.02
—
pF
Power gain
PG
12
15
—
dB
V
DS
= 6 V, V
G2S
= 3 V,
I
D
Noise figure
NF
—
3.0
4.5
dB
Noise figure
NF
—
3.0
4.0
dB
V
= 12 V, V
AGC
= 10.5 V,
f = 60 MHz
Power gain
PG
27
30
—
dB
V
DS
= 6 V, V
G2S
= 3 V,
I
D
Noise figure
Note:
NF
—
1.0
2.5
dB
Marking is “IY–”.
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| 3SK195 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER ,FM TUNER APPLICATIONS) |
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| 3SK199 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) |
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