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參數(shù)資料
| 型號： | 3SK206 |
| 廠商： | NEC Corp. |
| 英文描述： | RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
| 中文描述： | 射頻放大器。超高頻電視調(diào)諧器的N溝道MES的砷化鎵雙柵場效應(yīng)晶體管4芯微型模具 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 3SK206 |
1995
1987
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK206
FEATURES
Suitable for use as RF amplifier in UHF TV tuner.
Low C
rss
:
0.02 pF TYP.
High G
PS
:
20 dB TYP.
Low NF:
1.1 dB TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSX
V
G1S
V
G2S
I
D
P
T
T
ch
T
stg
10
–4.5
–4.5
80
200
125
V
V
V
mA
mW
°
C
°
C
–55 to +125
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
SYMBOL
BV
DSX
MIN.
10
TYP.
MAX.
UNIT
V
TEST CONDITIONS
V
G1S
= –4 V, V
G2S
= 0, I
D
= 20
μ
A
I
DSS
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
| y
fs
|
10
80
–3.5
–3.5
10
10
mA
V
V
μ
A
μ
A
mS
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 0
V
DS
= 5 V, V
G2S
= 0, I
D
= 100
μ
A
V
DS
= 5 V, V
G1S
= 0, I
D
= 100
μ
A
V
DS
= 0, V
G1S
= –4 V, V
G2S
= 0
V
DS
= 0, V
G2S
= –4 V, V
G1S
= 0
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1.0 kHz
25
35
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
C
iss
C
rss
G
PS
NF
1.0
1.5
0.02
20.0
1.1
2.0
0.035
pF
pF
dB
dB
16.0
2.5
I
DSS
Classification (Unit: mA)
Class
Marking
I
DSS
U76
U76
U77
U77
U78
U78
U79
U79
10 to 25
20 to 35
30 to 50
45 to 80
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltage or fields.
PACKAGE DIMENSIONS
in millimeters
2.8
1.5
+0.2
+0.2
0
+
–
0
+
–
0
+
–
0
+
–
1
+
–
0
+
–
2
(
0
(
2
3
1
4
0
0
5 °
5 °
5 °
5 °
1. Source
2. Drain
3. Gate 2
4. Gate 1
Document No. P10568EJ2V0DS00 (2nd edition)
(Previous No. TC-2134)
Date Published August 1995 P
Printed in Japan
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1.0 MHz
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