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參數(shù)資料
| 型號： | 3SK206 |
| 廠商： | NEC Corp. |
| 英文描述： | RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
| 中文描述： | 射頻放大器。超高頻電視調(diào)諧器的N溝道MES的砷化鎵雙柵場效應(yīng)晶體管4芯微型模具 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 56K |
| 代理商： | 3SK206 |
3SK206
2
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
400
300
200
100
0
25
T
A
– Ambient Temperature – °C
50
75
100
125
P
T
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
80
|
f
|
40
0
–1.8
–1.2
0
+0.6
+1.2
–0.6
V
G1S
– Gate 1 to Source Voltage – V
V
= 5 V
f = 1 kHz
V
G1S
= 1 V
0.5 V
0
–0.5 V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
= 5 V
f = 1 MHz
C
i
0
1.0
1.0
2.0
V
G2S
– Gate 2 to Source Voltage – V
0
+1.0
V
G2S
= 1 V at I
D
= 10 mA
V
G2S
= 1 V at I
D
= 5 mA
I
D
– Drain Current – mA
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
G
P
25
20
15
10
5
10
5
0
N
G
PS
NF
5
10
0
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
V
G2S
= 1 V
I
D
= 10 mA
f = 900 MHz
V
DS
– Drain to Source Voltage – V
G
P
20
5
0
N
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
G
PS
NF
10
0
5
10
10
–3.0
–2.0
V
G2S
– Gate 2 to Source Voltage – V
0
+1.0
+2.0
–1.0
G
P
30
15
0
–15
–30
–45
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
5
0
N
G
PS
NF
V
DS
= 5 V
V
G2S
= 1 V at
I
f = 900 MH
Z
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| 3SK222 | 制造商:NEC 制造商全稱:NEC 功能描述:RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
| 3SK222(NE92039) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 3SK223 | 制造商:NEC 制造商全稱:NEC 功能描述:RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
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