參數(shù)資料
型號: 3SK222
廠商: NEC Corp.
英文描述: RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
中文描述: 射頻放大器FM調(diào)諧器和甚高頻電視調(diào)諧器N溝道硅雙柵MOS場效應(yīng)晶體管4個(gè)引腳微型模具
文件頁數(shù): 1/6頁
文件大小: 58K
代理商: 3SK222
1993
1989
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK222
FEATURES
The Characteristic of Cross-Modulation is good.
CM = 92 dB
μ
TYP. @ f = 200 MHz, G
R
= –30 dB
Low Noise Figure:
NF1 = 1.2 dB TYP. (f = 200 MHz)
NF2 = 1.0 dB TYP. (f = 55 MHz)
G
PS
= 23 dB TYP. (f = 200 MHz)
High Power Gain:
Enhancement Type.
Suitable for use as RF amplifier in FM tuner and VHF TV tuner.
Automatically Mounting:
Small Package:
Embossed Type Taping
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
10 k
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
V
V
V
V
V
±
8 (
±
10)
*1
±
8 (
±
10)
*1
18
18
25
200
125
–55 to +125
mA
mW
°
C
°
C
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
Document No. P10574EJ2V0DS00 (2nd edition)
(Previous No. TD-2267)
Date Published August 1995 P
Printed in Japan
2.8
1.5
+0.2
+0.2
0
+
0
+
(
0
0
(
2
0
+
0
+
2
3
1
4
0
1
+
0
+
0
1. Source
2. Drain
3. Gate 2
4. Gate 1
PACKAGE DIMENSIONS
(Unit: mm)
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