參數(shù)資料
型號: 3SK222
廠商: NEC Corp.
英文描述: RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
中文描述: 射頻放大器FM調(diào)諧器和甚高頻電視調(diào)諧器N溝道硅雙柵MOS場效應(yīng)晶體管4個引腳微型模具
文件頁數(shù): 3/6頁
文件大?。?/td> 58K
代理商: 3SK222
3SK222
3
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
V
DS
– Drain to Source Voltage – V
I
D
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
25
50
75
100
125
P
T
V
G2S
= 3 V
T
A
– Ambient Temperature – °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
20
15
10
5
V
G1S
= 1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
0.8 V
0.6 V
15
V
G1S
– Gate1 to Source Voltage – V
I
D
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25
20
15
10
5
3
6
9
12
0.5
1.0
1.5
2.0
2.5
V
DS
= 6 V
V
G1S
– Gate1 to Source Voltage – V
|
f
|
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
32
24
16
8
0.5
1.0
1.5
2.0
2.5
V
= 6 V
f = 1 kHz
I
D
– Drain Current – mA
|
f
|
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
32
24
16
8
4
8
12
16
20
0
0
0
0
0
7.0
6.0
5.0
4.0
3.0
2.0
0
1.0
2.0
3.0
4.0
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
– Gate2 to Source Voltage – V
C
i
I
= 10 mA
(at V
DS
= 6 V
V
= 4 V)
f = 1 MHz
–1.0
V
G2S
= 4 V
3.5 V
3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
V
G2S
= 4 V
3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
V
= 6 V
f = 1 kHz
V
G2S
= 4 V
3.5 V
3.0 V
2.0 V
1.5 V
2.5 V
1.0 V
3.5 V
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