參數(shù)資料
型號(hào): 3SK230
廠商: NEC Corp.
英文描述: N-Channel Silicon Dual-Gate MOSFET(應(yīng)用于RF放大器的N溝道雙門MOSFET)
中文描述: N溝道硅雙柵MOSFET(應(yīng)用于射頻放大器的? MOSFET的溝道雙門)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 66K
代理商: 3SK230
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK230
RF AMP. FOR VHF/CATV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
1993
Document No. P10587EJ3V0DS00 (3rd edition)
Date Published November 1996 N
Printed in Japan
FEATURES
The Characteristic of Cross-Modulation is good.
CM = 108 dB
m
(TYP.) @f = 470 MHz, G
R
=
-
30 dB
Low Noise Figure
NF1 = 2.2 dB TYP. (@ = 470 MHz)
NF2 = 0.9 dB TYP. (@ = 55 MHz)
High Power Gain
G
PS
= 19.5 dB TYP. (@ = 470 MHz)
Enhancement Typ.
Suitable for use as RF amplifier in CATV tuner.
Automatically Mounting: Embossed Type Taping
Small Package: 4 Pins Mini Mold Package. (SC-61)
·
·
·
·
·
·
·
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
R
L
3
10 k
W
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
V
V
V
V
V
±8(±10)
*
±8(±10)
*
18
18
25
200
125
-
55 to +125
1
1
mA
mW
°
C
°
C
PRECAUTION
: Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltages or fields.
PACKAGE DIMENSIONS
(Unit: mm)
2.8
1.5
+0.2
+0.2
0
+
0
+
0
+
0
+
1
+
0
+
2
(
0
(
2
3
1
4
0
0
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
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