參數(shù)資料
型號: 3SK230
廠商: NEC Corp.
英文描述: N-Channel Silicon Dual-Gate MOSFET(應(yīng)用于RF放大器的N溝道雙門MOSFET)
中文描述: N溝道硅雙柵MOSFET(應(yīng)用于射頻放大器的? MOSFET的溝道雙門)
文件頁數(shù): 2/8頁
文件大小: 66K
代理商: 3SK230
2
3SK230
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown
Voltage
BV
DSX
18
V
V
G1S
= V
G2S
=
-
2 V, I
D
= 10
m
A
Drain Current
I
DSX
0.01
8.0
mA
V
DS
= 6 V, V
G2S
= 4.5 V, V
G1S
= 0.75 V
Gate1 to Source Cutoff Voltage
V
G1S(off)
0
+1.0
V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
m
A
Gate2 to Source Cutoff Voltage
V
G2S(off)
+0.6
+1.1
+1.6
V
V
DS
= 6 V, V
G1S
= 3 V, I
D
= 10
m
A
Gate1 Reverse Current
I
G1SS
±20
nA
V
DS
= V
G2S
= 0, V
G1S
= ±8 V
Gate2 Reverse Current
I
G2SS
±20
nA
V
DS
= V
G1S
= 0, V
G2S
= ±8 V
Forward Transfer Admittance
| y
fs
|
16
20
24
mS
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 kHz
Input Capacitance
C
iss
2.3
2.8
3.3
pF
Output Capacitance
C
oss
0.9
1.2
1.5
pF
Reverse Transfer Capacitance
C
rss
0.015
0.03
pF
Power Gain
G
ps
16.5
19.5
22.5
dB
Noise Figure 1
NF1
2.2
3.2
dB
Noise Figure 2
NF2
0.9
2.4
dB
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 55 MHz
I
DSX
Classification
Rank
U1A
U1B
Marking
U1A
U1B
I
DSX
(mA)
0.01 to 3.0
1.0 to 8.0
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 MHz
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 470 MHz
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3SK230-U1B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143RVAR
3SK231U1C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R
3SK231U1D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R
3SK232 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TV TUNER, UHF RF AMPLIFIER APPLICATIONS.