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參數(shù)資料
| 型號： | 3SK231 |
| 廠商： | NEC Corp. |
| 英文描述： | N-Channel Silicon Dual-Gate MOSFET(應用于RF放大器的N溝道雙門MOSFET) |
| 中文描述： | N溝道硅雙柵MOSFET（應用于射頻放大器的? MOSFET的溝道雙門） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 51K |
| 代理商： | 3SK231 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
Document No. P10588EJ2V0DS00 (2nd edition)
(Previous No. TC-2283)
Date Published March 1997 N
Printed in Japan
1993
FEATURES
Low Noise Figure
High Power Gain
Enhancement Typ.
Suitable for use as RF amplifier in UHF TV tuner.
Automatically Mounting : Embossed Type Taping
Small Package : 4 Pins Mini Mold Package. (SC-61)
NF = 2.0 dB TYP. (@ = 900 MHz)
G
ps
= 17.5 dB TYP. (@ = 900 MHz)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*R
L
10 k
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
V
V
V
V
V
8 ( 10)*
8 ( 10)*
18
18
25
200
125
55 to +125
mA
mW
C
C
PRECAUTION
:
Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Gate 1
Source
Drain
Gate 2
5
°
5
°
5
°
5
°
0
0
2
(
(
0
0
1
+
3
0
+
0
0
4
1
3
2
+
0
2.8
+0.2
0.3
+0.2
0.1
1.5
0
+
0
0
+
0
0
+
0
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| 3SK248 | Muting/Switching Applications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK231U1C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R |
| 3SK231U1D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R |
| 3SK232 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TV TUNER, UHF RF AMPLIFIER APPLICATIONS. |
| 3SK232_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TV Tuner, UHF RF Amplifier Applications |
| 3SK233 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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