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參數(shù)資料
| 型號(hào)： | 3SK231 |
| 廠商： | NEC Corp. |
| 英文描述： | N-Channel Silicon Dual-Gate MOSFET(應(yīng)用于RF放大器的N溝道雙門(mén)MOSFET) |
| 中文描述： | N溝道硅雙柵MOSFET（應(yīng)用于射頻放大器的? MOSFET的溝道雙門(mén)） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 3SK231 |
2
3SK231
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown Voltage
BV
DSX
18
V
V
G1S
= V
G2S
= 2 V, I
D
= 10 A
Drain Current
I
DSx
0.01
10.0
mA
V
DS
= 6 V, V
G2S
= 4.5 V, V
G1S
= 0.75 V
Gate1 to Source Cutoff Voltage
V
G1S(off)
1.0
+1.0
V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 A
Gate2 to Source Cutoff Voltage
V
G2S(off)
+0.6
+1.1
+1.6
V
V
DS
= 6 V V
G1S
= 3 V, I
D
= 10 A
Gate1 Reverse Current
I
G1SS
20
nA
V
DS
= V
G2S
= 0 V, V
G1S
= 8 V
Gate2 Reverse Current
I
G2SS
20
nA
V
DS
= V
G1S
= 0 V, V
G2S
= 8 V
Forward Transfer Admittance
y
fs
15
19.5
24
mS
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 kHz
Input Capacitance
C
iss
1.0
1.5
2.0
pF
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
Output Capacitance
C
oss
0.7
1.0
1.3
pF
f = 1 MHz
Reverse Transfer Capacitance
C
rss
0.015
0.03
pF
Power Gain
G
ps
14.0
17.5
21.0
dB
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
Noise Figure
NF1
2.0
3.0
dB
f = 900 MHz
I
DSX
Classification
Rank
U1C
U1D
Marking
U1C
U1D
I
DSX
(mA)
0.01 to 4.0
2.0 to 10.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK231U1C | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R |
| 3SK231U1D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) | SOT-143R |
| 3SK232 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TV TUNER, UHF RF AMPLIFIER APPLICATIONS. |
| 3SK232_07 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TV Tuner, UHF RF Amplifier Applications |
| 3SK233 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
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