參數(shù)資料
型號(hào): 2N7607T3
元件分類: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝: HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN
文件頁(yè)數(shù): 9/9頁(yè)
文件大?。?/td> 190K
代理商: 2N7607T3
www.irf.com
9
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
PRELIMINARY
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L = 0.49 mH
Peak IL = 20A, VGS = 10V
ISD ≤ 20A, di/dt ≤ 347A/s,
VDD ≤ 60V, TJ ≤ 150°C
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2011
Case Outline and Dimensions — Low Ohmic TO-257AA
3.05 [.120]
0.13 [.005]
0.71 [.028]
MAX.
B
5.08 [.200]
4.83 [.190]
10.92 [.430]
10.42 [.410]
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
3
2
1
15.88 [.625]
12.70 [.500]
0.88 [.035]
0.64 [.025]
0.50 [.020]
C A
B
2X
3X
2.54 [.100]
C
10.66 [.420]
10.42 [.410]
A
13.63 [.537]
13.39 [.527]
3X 3.81 [.150]
3.56 [.140]
NOT ES:
1. DIMENSIONING & TOLERANCING PER ANS I Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.
OPTIONAL
PIN-OUT
CERAMIC EYELETS
STANDARD
PIN-OUT
PIN ASSIGNMENTS
2 = SOURCE
1 = DRAIN
3 = GATE
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
CAUTION
相關(guān)PDF資料
PDF描述
2N7614M1 0.8 A, 250 V, 1.1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
2N7620M2 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7624U3 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET
2N779A 100 mA, 15 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-18
2N834 NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N760A 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors
2N760AL 制造商: 功能描述: 制造商:undefined 功能描述:
2N760B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18
2N7622U2 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
2N7632UC 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET