參數(shù)資料
型號: 2N7607T3
元件分類: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝: HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN
文件頁數(shù): 1/9頁
文件大?。?/td> 190K
代理商: 2N7607T3
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
20*
ID @ VGS = 4.5V, TC =100°C Continuous Drain Current
20*
IDM
Pulsed Drain Current
80
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
98
mJ
IAR
Avalanche Current
20
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
6.9
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in/1.6mm from case for 10s)
Weight
4.3 (Typical)
g
°C
A
03/01/11
www.irf.com
1
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level
RDS(on)
ID
IRHLYS77034CM
100K Rads (Si)
0.045
20A*
IRHLYS73034CM
300K Rads (Si)
0.045
20A*
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHLYS77034CM
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n Light Weight
n
Complimentary P-Channel Available -
IRHLYS797034CM
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
2N7607T3
Low-Ohmic
TO-257AA
* Current is limited by package
PD-97291
PRELIMINARY
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