參數(shù)資料
型號: 2N7607T3
元件分類: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝: HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN
文件頁數(shù): 8/9頁
文件大?。?/td> 190K
代理商: 2N7607T3
IRHLYS77034CM, 2N7607T3
Pre-Irradiation
8
www.irf.com
PRELIMINARY
QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
4.5V
Fig 17b. Gate Charge Test Circuit
Fig 17a. Basic Gate Charge Waveform
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
tp
V(BR)DSS
IAS
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
.
VGS
VDS
Pulse Width ≤ 1s
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
VGS
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