參數(shù)資料
型號: 2N7607T3
元件分類: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝: HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN
文件頁數(shù): 7/9頁
文件大小: 190K
代理商: 2N7607T3
www.irf.com
7
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
PRELIMINARY
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
P
t
DM
1
2
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
140
160
180
200
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
8.9A
12.6A
BOTTOM
20A
1
10
100
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100s
相關(guān)PDF資料
PDF描述
2N7614M1 0.8 A, 250 V, 1.1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
2N7620M2 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7624U3 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET
2N779A 100 mA, 15 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-18
2N834 NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N760A 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors
2N760AL 制造商: 功能描述: 制造商:undefined 功能描述:
2N760B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18
2N7622U2 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
2N7632UC 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET