參數(shù)資料
型號: 2N7607T3
元件分類: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝: HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN
文件頁數(shù): 6/9頁
文件大?。?/td> 190K
代理商: 2N7607T3
IRHLYS77034CM, 2N7607T3
Pre-Irradiation
6
www.irf.com
PRELIMINARY
Fig 12. Maximum Drain Current Vs.
CaseTemperature
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 11. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
2400
2800
3200
3600
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHz
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
0.01
0.1
1
10
100
I S
D
,
R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
VGS = 0V
TJ = 150°C
TJ = 25°C
25
50
75
100
125
150
TC , Case Temperature (°C)
0
5
10
15
20
25
30
35
I D
,
D
ra
in
C
ur
re
nt
(A
)
LIMITED BY PACKAGE
0
5 10 15 20 25 30 35 40 45 50 55 60
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS = 48V
VDS = 30V
VDS = 12V
ID = 20A
FOR TEST CIRCUIT
SEE FIGURE 17
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