參數(shù)資料
型號: 2N7607T3
元件分類: JFETs
英文描述: 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝: HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN
文件頁數(shù): 5/9頁
文件大?。?/td> 190K
代理商: 2N7607T3
www.irf.com
5
Pre-Irradiation
IRHLYS77034CM, 2N7607T3
PRELIMINARY
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
DrainCurrent
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
60
70
80
90
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
ID = 1.0mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 50A
ID = 250A
ID = 1.0mA
ID = 150mA
0
10
20
30
40
50
60
70
80
ID, Drain Current (A)
10
20
30
40
50
60
70
80
90
100
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
TJ = 25°C
TJ = 150°C
Vgs = 4.5V
2
4
6
8
10
12
VGS, Gate -to -Source Voltage (V)
0
10
20
30
40
50
60
70
80
90
100
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
ID = 20A
TJ = 25°C
TJ = 150°C
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