參數(shù)資料
型號(hào)： 2MBI75U4A-120
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： 100 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-7
文件頁(yè)數(shù)： 8/13頁(yè)
文件大?。?/td> 416K
代理商： 2MBI75U4A-120
H04-004-03a
4
MS5F6060
13
a
Storage temperature
Screw
Torque
-
Tj=125
oC
VCE(sat)
(terminal)
1ms
Tc=80
oC
3. Absolute Maximum Ratings ( at Tc= 25
oC unless otherwise specified )
Maximum
Ratings
VGES
Units
V
100
±20
VCES
1ms
1200
Symbols
Conditions
200
Tc=80
oC
Tc=25
oC
Icp
Tstg
-40 to +125
IGES
Collector Power Dissipation
1 device
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Pc
Tj=125
oC
VCE(sat)
(chip)
Tj=25
oC
mA
nA
Units
75
150
+150
75
400
4. Electrical characteristics ( at Tj= 25
oC unless otherwise specified )
150
V
-
2.05
2.20
-
2.25
Ic=75A
Tj=25
oC
VGE=15V
V
Gate-Emitter voltage
Collector current
Ic
Continuous
Tc=25
oC
A
typ.
N m
(*1) All terminals should be connected together when isolation test will be done.
Junction temperature
oC
Isolation
voltage
Viso
AC : 1min.
2500
VAC
max.
Characteristics
min.
ICES
-
1.0
VGE=0V
VCE=1200V
Conditions
VCE=0V
-
200
VGE=±20V
V
Ic=75mA
VGE(th)
VCE=20V
4.5
VCE=10V,VGE=0V,f=1MHz
-
6.5
8.5
-
1.90
2.05
2.10
-
8
-
nF
ton
Vcc=600V
-
0.32
1.20
us
Cies
0.60
tr(i)
VGE=±15V
-
0.03
-
tr
Ic=75A
-
0.10
0.41
1.00
tf
-
0.07
0.30
toff
RG=9.1Ω
-
VF
(terminal)
IF=75A
Tj=25
oC
VGE=0V
Tj=125
oC
VF
(chip)
V
-
1.90
-
1.65
1.80
1.75
-
1.80
1.95
IF=75A
-
Tj=125
oC
-
0.35
Tj=25
oC
us
R lead
1.39
-
mΩ
trr
-
Items
3.5
-Ic
Tj
W
Collector-Emitter voltage
-Ic pulse
(*3) Biggest internal terminal resistance among arm.
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*3)
between terminal and copper base (*1)
Mounting (*2)
Terminals (*2)
Zero gate voltage
collector current
Items
Symbols
相關(guān)PDF資料
PDF描述
2MBP600UN-120V 600 A, 1200 V, N-CHANNEL IGBT
2MP03SF 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N1022 7 A, 55 V, PNP, Ge, POWER TRANSISTOR, TO-3
2N456A 7 A, 30 V, PNP, Ge, POWER TRANSISTOR, TO-3
2N1034 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2MBI75UA-120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module U-Series 1200V / 75A 2 in one-package
2MBI75VA-120-50 制造商:Fuji Electric 功能描述:Dual IGBT Module 75A 1200V 600ns
2MBI800U4G-120 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 800A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 800A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.2kA; Collector Emitter Voltage Vces:2.12V; Power Dissipation Pd:4.8kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module;;RoHS Compliant: No
2MBI800U4G-170 制造商:Fuji Electric 功能描述:IGBT Module Dual 800A 1700V Cu 140x130mm
2MBI800UG-170 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*