參數(shù)資料
型號: 2MBI75U4A-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 100 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 2/13頁
文件大小: 416K
代理商: 2MBI75U4A-120
H04-004-03a
10
MS5F6060
13
a
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=75A, VGE=±15V,
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω, Tj=25oC
Vcc=600V, VGE=±15V, RG=9.1Ω, Tj=125oC
Tj=25oC
Vcc=600V, VGE=±15V, RG=9.1Ω
+VGE=15V, -VGE <= 15V, RG >= 9.1Ω,
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=75A, VGE=±15V, Tj=125oC
Tj <= 125oC
10
100
1000
10000
0
50
100
150
Collector current : Ic [ A ]
ton
tr
toff
tf
S
w
itc
hi
ng
tim
e
:t
on
,t
r,
to
ff,
tf
[n
se
c
]
10
100
1000
10000
0
50
100
150
Collector current : Ic [ A ]
tf
tr
toff
ton
S
w
itc
hi
ng
tim
e
:t
on
,t
r,
to
ff,
tf
[n
se
c
]
10
100
1000
10000
1
10
100
1000
Gate resistance : RG [ Ω ]
toff
ton
S
w
itc
hi
ng
tim
e
:t
on
,t
r,
to
ff,
tf
[n
se
c
]
tr
tf
0
2
4
6
8
10
12
14
0
25
50
75
100
125
150
Collector current : Ic [ A ]
Eoff(125oC)
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Eon(125oC)
Eoff(25oC)
Eon(25oC)
Err(125oC)
Err(25oC)
0
10
20
30
1
10
100
1000
Gate resistance : RG [ Ω ]
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Eon
Eoff
Err
0
50
100
150
200
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
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