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參數(shù)資料
| 型號(hào)： | 2MBI75U4A-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 416K |
| 代理商： | 2MBI75U4A-120 |
H04-004-03a
7
MS5F6060
13
a
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
1 High temperature
Test Method 101
5
( 0 : 1 )
Reverse Bias
Test temp.
: Ta = 125±5 ℃
(Tj ≦ 150 ℃)
Bias Voltage
: VC = 0.8×VCES
Bias Method
: Applied DC voltage to C-E
VGE = 0V
Test duration
: 1000hr.
2 High temperature
Test Method 101
5
( 0 : 1 )
Bias (for gate)
Test temp.
: Ta = 125±5 ℃
(Tj ≦ 150 ℃)
Bias Voltage
: VC = VGE = +20V or -20V
Bias Method
: Applied DC voltage to G-E
VCE = 0V
Test duration
: 1000hr.
3 Temperature
Test Method 102
5
( 0 : 1 )
Humidity Bias
Test temp.
: 85±2
oC
Condition code C
Relative humidity
: 85±5%
Bias Voltage
: VC = 0.8×VCES
Bias Method
: Applied DC voltage to C-E
VGE = 0V
Test duration
: 1000hr.
4 Intermitted
ON time
: 2 sec.
Test Method 106
5
( 0 : 1 )
Operating Life
OFF time
: 18 sec.
(Power cycle)
Test temp.
:
Tj=100±5 deg
( for IGBT )
Tj ≦ 150 ℃, Ta=25±5 ℃
Number of cycles
: 15000 cycles
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ce
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Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
Note
Lower limit Upper limit
Electrical
Leakage current
ICES
-
USL×2
mA
characteristic
±IGES
-
USL×2
A
Gate threshold voltage VGE(th)
LSL×0.8
USL×1.2
mA
Saturation voltage
VCE(sat)
-
USL×1.2
V
Forward voltage
VF
-
USL×1.2
V
Thermal
IGBT
VGE
-
USL×1.2
mV
resistance
or
VCE
FWD
VF
-
USL×1.2
mV
Isolation voltage
Viso
Broken insulation
-
Visual
Visual inspection
inspection
Peeling
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2MBI75UA-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module U-Series 1200V / 75A 2 in one-package |
| 2MBI75VA-120-50 | 制造商:Fuji Electric 功能描述:Dual IGBT Module 75A 1200V 600ns |
| 2MBI800U4G-120 | 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 800A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 800A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.2kA; Collector Emitter Voltage Vces:2.12V; Power Dissipation Pd:4.8kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module;;RoHS Compliant: No |
| 2MBI800U4G-170 | 制造商:Fuji Electric 功能描述:IGBT Module Dual 800A 1700V Cu 140x130mm |
| 2MBI800UG-170 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
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