參數資料
型號: 29LV800BE
廠商: Fujitsu Limited
英文描述: 8M (1M x 8/512 K x 16) BIT
中文描述: 8米(3米x五百一十二分之八畝× 16)位
文件頁數: 30/58頁
文件大?。?/td> 292K
代理商: 29LV800BE
MBM29LV800TE/BE
60/70/90
29
I
AC CHARACTERISTICS
Read Only Operations Characteristics
Parameter
Symbols
Test
Setup
Value*
Unit
60
70
90
JEDEC Standard
Min Max Min Max
Min
Max
Read Cycle Time
t
AVAV
t
RC
60
70
90
ns
Address to Output Delay
t
AVQV
t
ACC
CE
=
V
IL
OE
=
V
IL
OE
=
V
IL
60
70
90
ns
Chip Enable to Output Delay
t
ELQV
t
CE
60
70
90
ns
Output Enable to Output Delay
t
GLQV
t
OE
30
30
35
ns
Chip Enable to Output High-Z
t
EHQZ
t
DF
25
25
30
ns
Output Enable to Output High-Z
t
GHQZ
t
DF
25
25
30
ns
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
t
AXQX
t
OH
0
0
0
ns
RESET Pin Low to Read Mode
t
READY
20
20
20
μ
s
CE to BYTE Switching Low or High
t
ELFL
t
ELFH
5
5
5
ns
* : Test Conditions :
Output Load : 1 TTL gate and 30 pF (MBM29LV800TE60/BE60, MBM29LV800TE70/BE70)
1 TTL gate and 100 pF (MBM29LV800TE90/BE90)
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or 3.0 V
Timing measurement reference level
Input : 1.5 V
Output : 1.5 V
C
L
3.3 V
Diode
=
1N3064
or equivalent
2.7 k
Device
Under
Test
Diode = 1N3064
or equivalent
6.2 k
Test Conditions
Note : C
L
=
30 pF including jig capacitance (MBM29LV800TE60/BE60, MBM29LV800TE70/BE70)
C
L
=
100 pF including jig capacitance (MBM29LV800TE90/BE90)
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