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參數(shù)資料
| 型號： | 29SL800CT-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY |
| 中文描述： | 800萬位[1Mx8/512K x16] CMOS單電壓僅1.8V的閃存 |
| 文件頁數(shù)： | 1/64頁 |
| 文件大?。?/td> | 750K |
| 代理商： | 29SL800CT-90 |
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1
P/N:PM1224
MX29SL800C T/B
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
1.8V ONLY FLASH MEMORY
Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion
Hardware reset pin (RESET#)
- Hardware method to reset the device to reading array
data
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotected allows code changes
in previously locked sectors
CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Package type:
- 48-pin TSOP
- 48-ball CSP
-
All Pb-free devices are RoHS Compliant
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
10 years data retention
FEATURES
Extended single - supply voltage range 1.65V to 2.2V
1,048,576 x 8/524,288 x 16 switchable
Single power supply operation
- 1.8V only operation for read, erase and program
operation
Fast access time: 90ns
Low power consumption
- 12mA maximum active current (10MHz)
- 1uA typical standby current
Command register architecture
- Byte/word Programming (12us/18us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase
Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion
GENERAL DESCRIPTION
The MX29SL800C T/B is a 8-mega bit Flash memory
organized as 1M bytes of 8 bits or 512K words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29SL800C T/B is packaged in 48-pin TSOP and
48-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX29SL800C T/B offers access time as
fast as 90ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29SL800C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29SL800C T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29SL800C T/B uses a 1.65V~2.2V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
REV. 1.0, APR. 20, 2006
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