參數(shù)資料
型號: 29LV800BE
廠商: Fujitsu Limited
英文描述: 8M (1M x 8/512 K x 16) BIT
中文描述: 8米(3米x五百一十二分之八畝× 16)位
文件頁數(shù): 20/58頁
文件大?。?/td> 292K
代理商: 29LV800BE
MBM29LV800TE/BE
60/70/90
19
I
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
“MBM29LV800TE/BE Command Definitions” in “
I
DEVICE BUS OPERATION” defines the valid register com-
mand sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are valid only while
the Sector Erase operation is in progress. Furthermore both Read/Reset commands are functionally equivalent,
resetting the device to the read mode. Note that commands are always written at DQ
7
to DQ
0
and DQ
15
to DQ
8
bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
5
=
1) to read/reset mode, the read/reset
operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor
read cycles retrieve array data from the memory. The devices remain enabled for reads until the command
register contents are altered.
The devices will automatically power-up in the read/reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no
spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Character-
istics and Waveforms for the specific timing parameters.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such
manufacture and device codes must be accessible while the devices reside in the target system. PROM pro-
grammers typically access the signature codes by raising A
9
to a high voltage. However multiplexing high voltage
onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming method-
ology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read
cycle from address XX01h for
×
16 (XX02h for
×
8) returns the device code (MBM29LV800TE
=
DAh and MBM29LV
800BE
=
5Bh for
×
8 mode; MBM29LV800TE
=
22DAh and MBM29LV800BE
=
225Bh for
×
16 mode) .
(See “MBM29LV800TE/BE Sector Protection Verify Autoselect Codes” and “Expanded Autoselect Code Table”
in “
I
DEVICE BUS OPERATION”.) All manufacturer and device codes will exhibit odd parity with DQ
7
defined
as the parity bit. Sector state (protection or unprotection) will be informed by address XX02h for
×
16 (XX04h
for
×
8).
Scanning the sector addresses (A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
) while (A
6
, A
1
, A
0
)
=
(0, 1, 0) will produce a
logical “1” at device output DQ
0
for a protected sector. The programming verification should be performed margin
mode on the protected sector. (See “MBM29LV800TE/BE User Bus Operations (BYTE = V
IH
)” and “MBM29LV
800TE/BE User Bus Operations (BYTE = V
IL
)” in “
I
DEVICE BUS OPERATION”.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register. To
execute the Autoselect command during the operation, writing Read/Reset command sequence must precede
the Autoselect command.
Byte/Word Programming
The devices are programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle
operation. There are two “unlock” write cycles. These are followed by the program set-up command and data
write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is
latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever
happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence,
the system is not required to provide further controls or timings. The device will automatically provide adequate
internally generated program pulses and verify the programmed cell margin.
The automatic programming operation is completed when the data on DQ
7
is equivalent to data written to this
bit at which time the devices return to the read mode and addresses are no longer latched. (See “Hardware
Sequence Flags”.) Therefore, the devices require that a valid address to the devices be supplied by the system
at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being
programmed.
相關(guān)PDF資料
PDF描述
29LV800TE 8M (1M x 8/512 K x 16) BIT
29PL256N 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
29PS 25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches
29SL800CB-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
29SL800CT-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29LV800BT-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800TE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
29M132 功能描述:工業(yè)移動感應(yīng)器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor
29M30050R008BL 制造商:Micro Plastics Inc 功能描述: