參數(shù)資料
型號(hào): 29LV800BE
廠商: Fujitsu Limited
英文描述: 8M (1M x 8/512 K x 16) BIT
中文描述: 8米(3米x五百一十二分之八畝× 16)位
文件頁(yè)數(shù): 24/58頁(yè)
文件大?。?/td> 292K
代理商: 29LV800BE
MBM29LV800TE/BE
60/70/90
23
DQ
6
Toggle Bit I
Embedded Algorithms are in progress or completed.
During Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the
devices will result in DQ
6
toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle
is completed, DQ
6
will stop toggling and valid data will be read on the next successive attempts. During pro-
gramming, the Toggle Bit I is valid after the rising edge of the fourth WE pulses in the four write pulse sequence.
For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth WE pulse in the six
write pulses sequence. The Toggle Bit I is active during the sector time out.
In programming, if the sector being written is protected, the toggle bit will toggle for about 2
μ
s and then stop
toggling with data unchanged. In erase, devices will erase all selected sectors except for ones that are protected.
If all selected sectors are protected, the chip will toggle the toggle bit for about 200
μ
s and then drop back into
read mode, having data unchanged.
Either CE or OE toggling will cause DQ
6
to toggle. In addition, an Erase Suspend/Resume command will cause
DQ
6
to toggle.
See “Taggle Bit I during Embedded Algorithm Operation Timing Diagram” in “
I
TIMING DIAGRAM” for the
Toggle Bit I timing specifications and diagrams.
DQ
5
Exceeded Timing Limits
DQ
5
will indicate if the program or erase time has exceeded the specified limits (internal pulse count) . Under
these conditions, DQ
5
will produce a “1”. This is a failure condition which indicates that the program or erase
cycle was not successfully completed. Data Polling is the only operating function of devices under this condition.
The CE circuit will partially power down device under these conditions (to approximately 2 mA) . The OE and
WE pins will control the output disable functions as described in “MBM29LV800TE/BE User Bus Operations
(BYTE = V
IH
)” and “MBM29LV800TE/BE User Bus Operations (BYTE = V
IL
)” in “
I
DEVICE BUS OPERATION”.
The DQ
5
failure condition may also appear if a user tries to program a non blank location without pre-erase. In
this case, the devices lock out and never complete the Embedded Algorithm operation. Hence, the system never
read valid data on DQ
7
bit and DQ
6
never stop toggling. Once devices have exceeded timing limits, the DQ
5
bit
will indicate a “1.” Please note that this is not a device failure condition since devices were incorrectly used. If
this occurs, reset device with command sequence.
DQ
3
Sector Erase Timer
After completion of the initial sector erase command sequence, sector erase time-out will begin. DQ
3
will remain
low until the time-out is completed. Data Polling and Toggle Bit are valid after the initial sector erase command
sequence.
If Data Polling or the Toggle Bit I indicates device has been written with a valid erase command, DQ
3
may be
used to determine if the sector erase timer window is still open. If DQ
3
is high (“1”) the internally controlled erase
cycle has begun : If DQ
3
is low (“0”) , the device will accept additional sector erase commands. To insure the
command has been accepted, the system software should check the status of DQ
3
prior to and following each
subsequent Sector Erase command. If DQ
3
were high on the second status check, the command may not have
been accepted.
See “Hardware Sequence Flags”.
相關(guān)PDF資料
PDF描述
29LV800TE 8M (1M x 8/512 K x 16) BIT
29PL256N 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
29PS 25PS, 42PS, 44PS, 45PS and 46PS Series Pressure Switches
29SL800CB-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
29SL800CT-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29LV800BT-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800TE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
29M132 功能描述:工業(yè)移動(dòng)感應(yīng)器和位置傳感器 RESISTIVE & OPTICAL RoHS:否 制造商:Honeywell 輸出類型:Analog - Current 電壓額定值:12 VDC to 30 VDC 線性:+/- 0.0011 % 溫度范圍:- 40 C to + 85 C 總電阻: 容差: 類型:Rotary Sensor
29M30050R008BL 制造商:Micro Plastics Inc 功能描述: