- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F640P3 (Intel Corp.) Intel StrataFlash Embedded Memory PDF資料下載
參數(shù)資料
| 型號： | 28F640P3 |
| 廠商： | Intel Corp. |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 英特爾StrataFlash嵌入式存儲器 |
| 文件頁數(shù)： | 81/82頁 |
| 文件大?。?/td> | 749K |
| 代理商： | 28F640P3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁當前第81頁第82頁
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
75
Partition Region 2 Information
(1)
See table below
Address
Len
Bot
2
68:
69:
1
6A:
P = 39h
Description
Bottom
(P+2F)h
(P+30)h
(P+31)h
Top
(P+27)h Number of identical partitions within the partition region
(P+28)h
(P+29)h
Simultaneous program and erase operations allowed in other
partitions while a partition in this region is in Read mode
bits 0
–
3 = number of simultaneous Program operations
bits 4
–
7 = number of simultaneous Erase operations
(Optional flash features and commands)
Top
60:
61:
62:
(P+32)h
(P+2A)h
1
6B:
63:
(P+33)h
(P+2B)h
1
6C:
64:
(P+34)h
(P+2C)h
1
6D:
65:
(P+35)h
(P+36)h
(P+37)h
(P+38)h
(P+39)h
(P+3A)h
(P+3B)h
(P+2D)h Partition Region 2 Erase Block Region 1 Information
(P+2E)h
bits 0
–
15 = y, y+1 = number of identical-size erase blocks
(P+2F)h
bits 16
–
31 = z, region erase block(s) size are z x 256 bytes
(P+30)h
(P+31)h Partition 2 (Erase Region 1)
(P+32)h Minimum block erase cycles x 1000
(P+33)h
Partition 2 (Erase Region 1) bits per cell
bits 0
–
3 = bits per cell in erase region
bit 4 = reserved for
“
internal ECC used
”
(1=yes, 0=no)
bits 5
–
7 = reserve for future use
Partition 2 (erase region 1) pagemode and synchronous mode
capabilities as defined in Table 10.
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
4
6E:
6F:
70:
71:
72:
73:
74:
66:
67:
68:
69:
6A:
6B:
6C:
2
1
(P+3C)h
(P+34)h
1
75:
6D:
(P+35)h Partition Region 2 Erase Block Region 2 Information
(P+36)h
bits 0
–
15 = y, y+1 = number of identical-size erase blocks
(P+37)h
bits 16
–
31 = z, region erase block(s) size are z x 256 bytes
(P+38)h
(top parameter device only)
(P+39)h Partition 2 (Erase Region 2) minimum block erase cycles x 1000
(P+3A)h (top parameter device only)
(P+3B)h
Partition 2 (Erase Region 2) bits per cell (top parameter only)
bits 0
–
3 = bits per cell in erase region
bit 4 = reserved for
“
internal ECC used
”
(1=yes, 0=no)
bits 5
–
7 = reserve for future use
Partition 2 (Erase Region 2) pagemode and synchronous mode
capabilities as defined in Table 10. (top parameter only)
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
4
6E:
6F:
70:
71:
72:
73:
74:
2
1
(P+3C)h
1
75:
(P+3D)h
(P+3E)h
(P+3D)h Features Space definitions (Reserved for future use)
(P+3E)h Reserved for future use
TBD
Resv'd
76:
77:
76:
77:
Simultaneous program and erase operations allowed in other
partitions while a partition in this region is in Program mode
bits 0
–
3 = number of simultaneous Program operations
bits 4
–
7 = number of simultaneous Erase operations
Simultaneous program and erase operations allowed in other
partitions while a partition in this region is in Erase mode
bits 0
–
3 = number of simultaneous Program operations
bits 4
–
7 = number of simultaneous Erase operations
Partitions' erase block regions in this Partition Region.
x = 0 = no erase blocking; the Partition Region erases in
“
bulk
”
x = number of erase block regions w/ contiguous same-size
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F320C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
| 28F800C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
| 28F160C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
| 28F320D18 | 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器) |
| 28F320J5 | 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F640W30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F650 | 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip |
| 28F651 | 制造商:Cinch Connectors 功能描述:2 Lug Terminal Strip |
| 28F652 | 制造商:Cinch Connectors 功能描述:3 Lug Terminal Strip |
| 28F653 | 制造商:Cinch Connectors 功能描述:4 Lug Terminal Strip |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。