參數(shù)資料
型號： 28F640P3
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲器
文件頁數(shù)： 3/82頁
文件大?。?/td> 749K
代理商： 28F640P3
Preliminary
iii
28F320W30, 28F3204W30, 28F6408W30, 28F640W30
Contents
1.0
Product Introduction
.................................................................................................1
1.1
Document Purpose................................................................................................1
1.2
Nomenclature........................................................................................................1
Product Description
..................................................................................................2
2.1
Product Overview..................................................................................................2
2.2
Package Diagram..................................................................................................3
2.3
Package Dimensions.............................................................................................4
2.4
Signal Descriptions................................................................................................5
2.5
Block Diagram.......................................................................................................6
2.6
Flash Memory Map................................................................................................6
Product Operations
...................................................................................................9
3.1
Bus Operations......................................................................................................9
3.2
Flash Command Definitions..................................................................................9
Flash Read Modes
...................................................................................................12
4.1
Read Array..........................................................................................................12
4.1.1
Asynchronous Mode...............................................................................12
4.1.2
Synchronous Mode ................................................................................12
4.2
Set Configuration Register (CR)..........................................................................13
4.2.1
Read Mode (RM)....................................................................................14
4.2.2
First Latency Count (LC2
–
0)..................................................................14
4.2.3
WAIT Signal Polarity (WT) .....................................................................16
4.2.4
WAIT Signal Function.............................................................................17
4.2.5
Data Output Configuration (DOC)..........................................................17
4.2.6
WAIT Configuration (WC).......................................................................18
4.2.7
Burst Sequence (BS)..............................................................................19
4.2.8
Clock Configuration (CC) .......................................................................20
4.2.9
Burst Wrap (BW)....................................................................................21
4.2.10 Burst Length (BL2
–
0).............................................................................21
4.3
Read Query Register...........................................................................................21
4.4
Read ID Register.................................................................................................21
4.5
Read Status Register..........................................................................................22
4.5.1
Clear Status Register.............................................................................24
4.6
Read-While-Write/Erase......................................................................................24
Program and Erase Voltages
...............................................................................24
5.1
Factory Program Mode........................................................................................24
5.2
Programming Voltage Protection (VPP)..............................................................25
5.3
Enhanced Factory Programming (EFP)..............................................................25
5.3.1
EFP Requirements and Considerations.................................................26
5.3.2
Setup Phase...........................................................................................26
5.3.3
Program Phase ......................................................................................26
5.3.4
Verify Phase...........................................................................................27
5.3.5
Exit Phase ..............................................................................................27
5.4
Write Protection (V
PP
< V
PPLK
) ...........................................................................27
2.0
3.0
4.0
5.0
相關(guān)PDF資料
PDF描述
28F320C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
28F160C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
28F320D18 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器)
28F320J5 5 Volt Intel StrataFlash Memory(5 V 32M位英特爾StrataFlash存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640W30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F650 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip
28F651 制造商:Cinch Connectors 功能描述:2 Lug Terminal Strip
28F652 制造商:Cinch Connectors 功能描述:3 Lug Terminal Strip
28F653 制造商:Cinch Connectors 功能描述:4 Lug Terminal Strip
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*