參數(shù)資料
型號： 28F6408W30
廠商： Intel Corp.
元件分類： DRAM
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30）
文件頁數(shù)： 76/82頁
文件大?。?/td> 749K
代理商： 28F6408W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
70
Preliminary
C.4
CFI Query Identification String
The Identification String provides verification that the component supports the Common Flash
Interface specification. It also indicates the specification version and supported vendor-specified
command set(s).
Table C5. CFI Identification
Table C6. System Interface Information
Offset
Length
Description
Add.
10:
11:
12:
13:
14:
15:
16:
17:
18:
19:
1A:
Hex
Code Value
--51
--52
--59
--03
--00
--39
--00
--00
--00
--00
--00
10h
3
Query-unique ASCII string
“
QRY
“
"Q"
"R"
"Y"
13h
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specified algorithms
Extended Query Table primary algorithm address
15h
2
17h
2
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
19h
2
Offset
Length
Description
Add.
1B:
Hex
Code Value
--17
1Bh
1
1.7V
1Ch
1
1C:
--19
1.9V
1Dh
1
1D:
--B4
11.4V
1Eh
1
1E:
--C6
12.6V
1Fh
20h
21h
22h
23h
24h
25h
26h
1
1
1
1
1
1
1
1
“
n
”
such that typical single word program time-out = 2
n
μ-sec
“
n
”
such that typical max. buffer write time-out = 2
n
μ-sec
“
n
”
such that typical block erase time-out = 2
n
m-sec
“
n
”
such that typical full chip erase time-out = 2
n
m-sec
“
n
”
such that maximum word program time-out = 2
n
times typical
“
n
”
such that maximum buffer write time-out = 2
n
times typical
“
n
”
such that maximum block erase time-out = 2
n
times typical
“
n
”
such that maximum chip erase time-out = 2
n
times typical
1F:
20:
21:
22:
23:
24:
25:
26:
--04
--00
--0A
--00
--04
--00
--03
--00
16μs
NA
1s
NA
256μs
NA
8s
NA
V
PP
[programming] supply minimum program/erase voltage
bits 0
–
3 BCD 100 mV
bits 4
–
7 HEX volts
V
PP
[programming] supply maximum program/erase voltage
bits 0
–
3 BCD 100 mV
bits 4
–
7 HEX volts
V
CC
logic supply minimum program/erase voltage
bits 0
–
3 BCD 100 mV
bits 4
–
7 BCD volts
V
CC
logic supply maximum program/erase voltage
bits 0
–
3 BCD 100 mV
bits 4
–
7 BCD volts
相關(guān)PDF資料
PDF描述
28F640W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
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28F640J3C120 制造商: 功能描述: 制造商:undefined 功能描述:
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