參數(shù)資料
型號(hào)： 28F6408W30
廠商： Intel Corp.
元件分類： DRAM
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： 1.8伏英特爾無(wú)線閃存的3伏的I / O和SRAM（寬30）
文件頁(yè)數(shù)： 24/82頁(yè)
文件大?。?/td> 749K
代理商： 28F6408W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
18
Preliminary
As an example, a clock frequency of 52 MHz will be used. The clock period is 19.2 ns. This data is
applied to the formula above for the subsequent reads assuming the data output hold time is one
clock:
14 ns + 4 ns
≤
19.2 ns
This equation is satisfied and data output will be available and valid at every clock period.
If t
DATA
is long, hold for two cycles.
Now assume the clock frequency is 66 MHz. This corresponds to a 15 ns period. The initial access
time is calculated to be 80 ns (LC 4). This condition satisfies t
AVQV
(ns) + t
ADD-DELAY
(ns) +
t
DATA
(ns) = 70 ns + 6 ns + 4 ns = 80 ns, as shown above in the First Access Latency Count
equations. However, the data output hold time of one clock violates the one-clock data hold
condition:
t
CHQV
(ns) + t
DATA
(ns)
≤
One CLK Period
14 ns + 4 ns = 18 ns is not less than one clock period of 15 ns. To satisfy the formula above, the
data output hold time must be set at 2 clocks to correctly allow for data output setup time. This
formula is also satisfied if the CPU has t
DATA
(ns)
≤
1 ns, which yields:
14 ns + 1 ns
≤
15 ns
In page mode reads, the initial access time can be determined by the formula:
t
ADD-DELAY
(ns) + t
DATA
(ns) + t
AVQV
(ns)
and subsequent reads in page mode are defined by:
t
APA
(ns) + t
DATA
(ns)
(minimum time)
4.2.6
WAIT Configuration (WC)
CR.8 sets the WAIT signal delay. The WAIT signal delay determines when the WAIT signal is
asserted. The WAIT signal can be asserted either one clock before or at the time of the misaligned
16-word boundary crossing. An asserted WAIT signal indicates invalid data on the data bus.
Figure 8. Data Output Configuration with WAIT Signal Delay
DQ
15-0
[Q]
CLK [C]
Valid
Output
Valid
Output
Valid
Output
DQ
15-0
[Q]
Valid
Output
Valid
Output
1 CLK
Data Hold
WAIT (CR.8 = 1)
WAIT (CR.8 = 0)
t
CHQV
t
CHQV
WAIT (CR.8 = 0)
WAIT (CR.8 = 1)
2 CLK
Data Hold
t
CHTL/H
Note 1
Note 1
Note 1
Note 1
Note1: WAIT shown active high (CR.10 = 1)
相關(guān)PDF資料
PDF描述
28F640W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F320B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F640P3 Intel StrataFlash Embedded Memory
28F320C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
28F640C3BC80 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C-120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3D75 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
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