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參數(shù)資料
| 型號： | 28F6408W30 |
| 廠商： | Intel Corp. |
| 元件分類： | DRAM |
| 英文描述： | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 中文描述： | 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30） |
| 文件頁數(shù)： | 41/82頁 |
| 文件大?。?/td> | 749K |
| 代理商： | 28F6408W30 |
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28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
35
11.0
Electrical Specifications
11.1
Absolute Maximum Ratings
NOTES:
1. All specified voltages are with respect to V
SS
. Minimum DC voltage is –0.5 V on input/output signals and
–0.2 V on V
CC
and V
PP
supplies. During transitions, this level may undershoot to –2.0 V for periods <20 ns
which, during transitions, may overshoot to V
CC
+2.0 V for periods <20 ns.
2. Maximum DC voltage on V
PP
may overshoot to +14.0 V for periods <20 ns.
3. V
PP
program voltage is normally V
PP1
. V
PP
can be V
PP2
for 1000 cycles on the main blocks and 2500 cycles
on the parameter blocks during program/erase.
4. Output shorted for no more than one second. No more than one output shorted at a time.
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage. These are stress
ratings only. Operation beyond the “Operating Conditions” is not recommended and extended exposure
beyond the “Operating Conditions” may affect device reliability.
11.2
Extended Temperature Operation
Parameter
Note
Maximum Rating
Temperature under Bias
–25 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage On Any Signals (except V
CC
, V
CCQ
, V
PP
and S-V
CC
)
1
–0.5 V to +3.80 V
V
PP
Voltage
1,2,3
–0.2 V to +14 V
V
CC
Voltage
1
–0.2 V to +2.40 V
V
CCQ
and S-V
CC
Voltage
1
–0.2 V to +3.36 V
Output Short Circuit Current
4
100 mA
NOTICE:
This datasheet contains preliminary information on new products in production. Specifications are
subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before
finalizing a design
.
Symbol
Parameter
Note
Min
Max
Unit
T
A
Operating Temperature
–25
85
°C
V
CC
V
CC
Supply Voltage
1.70
1.90
V
V
CCQ
, S-V
CC
Flash I/O and SRAM Supply Voltages
2
2.20
3.30
V
V
PP1
V
PP
Voltage Supply (Logic Level)
1
0.90
1.90
V
V
PP2
Factory Programming V
PP
1
11.4
12.6
t
PPH
Maximum V
PP
Hours
V
PP
= V
PP2
1
80
Hours
Block Erase
Cycles
Main and Parameter Blocks
V
PP
= V
CC
1
100,000
Cycles
Main Blocks
V
PP
= V
PP2
1
1000
Parameter Blocks
V
PP
= V
PP2
1
2500
相關PDF資料 |
PDF描述 |
|---|---|
| 28F640W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F320B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F640P3 | Intel StrataFlash Embedded Memory |
| 28F320C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器) |
| 28F800C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 28F640C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| 28F640C3BC80 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3C120 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3C-120 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3D75 | 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述: |
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