參數(shù)資料
型號： 28F6408W30
廠商： Intel Corp.
元件分類： DRAM
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： 1.8伏英特爾無線閃存的3伏的I / O和SRAM（寬30）
文件頁數(shù)： 20/82頁
文件大?。?/td> 749K
代理商： 28F6408W30
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
14
Preliminary
.
4.2.1
Read Mode (RM)
CR.15 sets the flash read mode. The two read modes are page mode (default mode) and burst
mode. The flash device can only be configured for one of these modes at any one time.
4.2.2
First Latency Count (LC
2
–
0
)
The First Access Latency Count configuration tells the device how many clocks must elapse from
ADV#-high (V
IH
) before the first data word should be driven onto its data pins. The input clock
frequency determines this value. See
Table 6,
“
Configuration Register Bits
”
on page 13
for latency
values.
Figure 7,
“
First Access Latency Configuration
”
on page 16
shows data output latency from
ADV#-active for different latencies.
Use these equations to calculate First Access Latency Count:
{1/ Frequency} = CLK Period
(1)
n (CLK Period)
≥
t
AVQV
(ns) + t
ADD-DELAY
(ns) + t
DATA
(ns) (2)
n-2 = First Access Latency Count (LC)
*
(3)
Table 7. Configuration Register Bit Settings
Bit Name
Setting
Read Mode (RM)
CR.15
0 = Burst or synchronous mode.
1 = Page or asynchronous mode.
First Latency Count (LC
2-0
)
CR.13
–
CR.11
Code 0 = 000. Reserved.
Code 1 = 001. Reserved.
Code 2 = 010.
Code 3 = 011.
Code 4 = 100.
Code 5 = 101.
Code 6 = 110. Reserved.
Code 7 = 111. Reserved.
WAIT Polarity (WT)
CR.10
0 = active low signal.
1 = active high signal
Data Output Configuration (DOC)
CR.9
0 = hold data for one clock cycle.
1 = hold data for two clock cycles.
WAIT Configuration (WC)
CR.8
0 = WAIT signal asserted during 16-word row boundary transition.
1 = WAIT signal assert one data cycle before 16-word row boundary
transition.
Burst Sequence (BS)
CR.7
0 = Intel burst sequence.
1 = linear burst sequence.
Clock Configuration (CC)
CR.6
0 = falling edge of clock.
1 = rising edge of clock.
Burst Wrap (BW) CR.3
0 = Wrap enabled.
1 = Wrap disabled.
Burst Length (BL
2-0
)
CR.2
–
CR.0
001 = 4 Word burst mode.
010 = 8 Word burst mode.
011 = Reserved.
111 = Continuous burst mode.
相關PDF資料
PDF描述
28F640W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F320B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F640P3 Intel StrataFlash Embedded Memory
28F320C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
28F800C3 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
相關代理商/技術參數(shù)
參數(shù)描述
28F640C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
28F640C3BC80 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C-120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3D75 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*