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參數(shù)資料
| 型號(hào)： | 28F320S5 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器) |
| 中文描述： | 3伏，32MB的FlashFile內(nèi)存（3伏，32位FlashFile存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 22/51頁(yè) |
| 文件大?。?/td> | 320K |
| 代理商： | 28F320S5 |
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28F160S5/28F320S5
E
22
PRELIMINARY
4.2.6
DEVICE GEOMETRY DEFINITION
This field provides critical details of the flash
device geometry.
Table 10. Device Geometry Definition
Offset
Length
(bytes)
Description
28F160S5
28F320S5
27h
01h
Device Size = 2
N
in Number of Bytes
27:
0015h
(15h = 21d, 2
21
=
2097152 bytes =
2 MB = 16 Mb)
27:
0016h
(16h = 22d, 2
22
=
4194304 bytes
= 4 MB = 32 Mb)
28h
02h
Flash Device Interface Description
value
meaning
0002h
x8/x16 asynchronous
28:
29:
0002h
0000h
28:
29:
0002h
0000h
2Ah
02h
Maximum Number of Bytes in Write Buffer
= 2
N
2A:
2B:
0005h
0000h
(2
5
= 32)
2A:
2B:
0005h
0000h
(2
5
= 32)
2Ch
01h
Number of Erase Block Regions within
Device:
bits 7
–0 = x
= # of regions within the
device containing one or more
contiguous Erase Blocks of the
same size.
2C:
0001h
2C:
0001h
2Dh
04h
Erase Block Region Information
bits 15–0 = y
, where y+1 = number of
erase blocks of identical size within
region.
bits 31–16 = z
, where the erase block(s)
within this region are z
×
256 Bytes. z is
the number of
“256-Byte” clusters in an
erase block.
y:
2D:
2E:
001Fh
0000h
(1Fh+1=32 blocks)
z:
2F:
30:
0000h
0001h
(100h = 256,
256 x 256 = 64 KB)
y:
2D:
2E:
003Fh
0000h
(3Fh+1=64 blocks)
z:
2F:
30:
0000h
0001h
(100h = 256,
256 x 256= 64 KB)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F200B5 | 5V Boot Block Flash Memory(5 V 引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F200BV-TB | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-TB | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-B | 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F320W30 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F400B3 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 28F400B5 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT |
| 28F400B5WG8BET | 制造商: 功能描述: 制造商:Micron Technology Inc 功能描述: 制造商:undefined 功能描述: |
| 28F400BL-B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
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