- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F320S5 (Intel Corp.) 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | 28F320S5 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器) |
| 中文描述： | 3伏，32MB的FlashFile內(nèi)存（3伏，32位FlashFile存儲(chǔ)器） |
| 文件頁數(shù)： | 13/51頁 |
| 文件大?。?/td> | 320K |
| 代理商： | 28F320S5 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
E
28F160S5/28F320S5
13
PRELIMINARY
Table 2. Bus Operations
Mode
Notes
RP#
CE
0
#
CE
1
# OE#
(11)
WE#
(11)
Address
V
PP
DQ
(8)
STS
(3)
Read
1,2
V
IH
V
IL
V
IL
V
IL
V
IH
X
X
D
OUT
X
Output Disable
V
IH
V
IL
V
IL
V
IH
V
IH
X
X
High Z
X
Standby
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
V
IH
X
X
X
X
High Z
X
Reset/Power-
Down Mode
10
V
IL
X
X
X
X
X
X
High Z
High Z
(9)
Read Identifier
Codes
4
V
IH
V
IL
V
IL
V
IL
V
IH
See
Figure 5
X
D
OUT
High Z
(9)
Read Query
5
V
IH
V
IL
V
IL
V
IL
V
IH
See Table 6
X
D
OUT
High Z
(9)
Write
3,6,7
V
IH
V
IL
V
IL
V
IH
V
IL
X
V
PPH
D
IN
X
NOTES:
1. Refer to DC Characteristics When V
PP
≤
V
PPLK
, memory contents can be read, but not altered.
2. X can be V
IL
or V
IH
for control and address input pins and V
PPLK
or V
PPH
for V
PP
. See DC Characteristics for V
PPLK
and
V
PPH
voltages.
3. STS in RY/BY# mode (default) is V
OL
when the WSM is executing internal block erase, programming, or lock-bit
configuration algorithms. It is V
OH
when the WSM is not busy, in block erase suspend mode (with programming inactive),
program suspend mode, or deep power-down mode.
4. See Section 4.3 for read identifier code data.
5. See Section 4.2 for read query data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when V
PP
= V
PPH
and
V
CC
= V
CC1/2
(see Section 6.2).
7. Refer to Table 3 for valid D
IN
during a write operation.
8. DQ refers to DQ
0
–7
if BYTE# is low and DQ
0–15
if BYTE# is high.
9. High Z will be V
OH
with an external pull-up resistor.
10.
RP# at GND ± 0.2 V ensures the lowest deep power-down current.
11. OE# = V
IL
and WE# = V
IL
concurrently is an undefined state and should not be attempted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F200B5 | 5V Boot Block Flash Memory(5 V 引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F200BV-TB | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-TB | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-B | 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F320W30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F400B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 28F400B5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT |
| 28F400B5WG8BET | 制造商: 功能描述: 制造商:Micron Technology Inc 功能描述: 制造商:undefined 功能描述: |
| 28F400BL-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。