參數(shù)資料
型號(hào)： 28F320J3A
廠商： Intel Corp.
英文描述： 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器)
中文描述： 3伏特英特爾StrataFlash存儲(chǔ)器（3伏32兆位英特爾的StrataFlash存儲(chǔ)器）
文件頁(yè)數(shù)： 8/58頁(yè)
文件大?。?/td> 574K
代理商： 28F320J3A
28F128J3A, 28F640J3A, 28F320J3A
2
PRODUCT PREVIEW
suspended (and programming is inactive), program is suspended, or the device is in reset/power-
down mode. Additionally, the configuration command allows the STS pin to be configured to pulse
on completion of programming and/or block erases.
Three CE pins are used to enable and disable the device. A unique CE logic design (see Table 2,
Chip Enable Truth Table
) reduces decoder logic typically required for multi-chip designs. External
logic is not required when designing a single chip, a dual chip, or a 4-chip miniature card or SIMM
module.
The BYTE# pin allows either x8 or x16 read/writes to the device. BYTE# at logic low selects 8-bit
mode; address A
selects between the low byte and high byte. BYTE# at logic high enables 16-bit
operation; address A
becomes the lowest order address and address A
0
is not used (don’t care). A
device block diagram is shown in Figure 1.
When the device is disabled (see Table 2,
Chip Enable Truth Table
) and the RP# pin is at V
, the
standby mode is enabled. When the RP# pin is at GND, a further power-down mode is enabled
which minimizes power consumption and provides write protection during reset. A reset time
(t
) is required from RP# switching high until outputs are valid. Likewise, the device has a wake
time (t
) from RP#-high until writes to the CUI are recognized. With RP# at GND, the WSM is
reset and the status register is cleared.
3 Volt Intel StrataFlash memory devices are available in two package types. Both 56-lead TSOP
(Thin Small Outline Package) and CSP (Chip Scale Package) support all offered densities. Figures
2 and 3 show the pinouts.
Figure 1.
3 Volt Intel StrataFlash Memory Block Diagram
32-Mbit: Thirty-two
64-Mbit: Sixty-four
128-Mbit: One-hundred-
twenty-eight
128-Kbyte Blocks
Input Buffer
O
M
Y-Gating
Program/Erase
Voltage Switch
Data
Comparator
Status
Register
Identifier
Register
D
R
I/O Logic
Address
Latch
Address
Counter
X-Decoder
Y-Decoder
Input Buffer
Output Buffer
GND
V
CC
BYTE#
V
PEN
CE
0
CE
1
CE
2
WE#
OE#
RP#
Command
User
Interface
32-Mbit: A
0
- A
21
64-Mbit: A
0 -
A
22
128-Mbit: A
0
- A
23
DQ
0
- DQ
15
V
CC
W
Write State
Machine
Multiplexer
Query
STS
V
CCQ
CE
Logic
相關(guān)PDF資料
PDF描述
28F640J3A 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲(chǔ)器)
28F128 3 Volt Intel StrataFlash Memory
28F1602C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
28F3204C3 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級(jí)堆芯片封裝存儲(chǔ)器)
28F1604C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
28F320J5_02 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
28F320S3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
28F320S5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WORD-WIDE FlashFile MEMORY FAMILY
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